ga200sa60up www.vishay.com vishay semiconductors revision: 26-oct-11 1 document number: 94364 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 insulated gate bipolar transistor (ultrafast speed igbt), 100 a features ? ultrafast: optimized for minimum saturation voltage and speed up to 40 khz in hard switching, > 200 khz in resonant mode ? very low conduction and switching losses ? fully isolate package (2500 v ac/rms ) ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? designed for increased operating efficiency in power conversion: ups, smps, welding, induction heating ? lower overall losses available at frequencies = 20 khz ? easy to assemble and parallel ? direct mounting to heatsink ? lower emi, requires less snubbing ? plug-in compatible with other sot-227 packages product summary v ces 600 v v ce(on) (typical) 1.92 v v ge 15 v i c 100 a sot-227 absolute maximum ratings parameter symbol test conditions max. units collector to emitter breakdown voltage v ces 600 v continuous colle ctor current i c t c = 25 c 200 a t c = 100 c 100 pulsed collector current i cm 400 clamped inductive load current i lm v cc = 80 % (v ces ), v ge = 20 v, l = 10 h, r g = 2.0 ? , see fig. 13a 400 gate to emitter voltage v ge 20 v reverse voltage avalanche energy e arv repetitive ra ting; pulse width limited by maximum juncti on temperature 160 mj rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v maximum power dissipation p d t c = 25 c 500 w t c = 100 c 200 operating junction and storage temperature range t j , t stg - 55 to + 150 c mounting torque 6-32 or m3 screw 1.3 (12) n ? m (lbf ?? in) thermal and mechanical specifications parameter symbol typ. max. units junction to case r thjc -0.25 c/w case to sink, flat , greased surface r thcs 0.05 - weight of module 30 - g
ga200sa60up www.vishay.com vishay semiconductors revision: 26-oct-11 2 document number: 94364 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitter breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 600 - - v emitter to co llector breakdown voltage v (br)ecs v ge = 0 v, i c = 1.0 a pulse width ? 80 s; duty factor ? 0.1 18 - - temperature coeff. of breakdown ? v (br)ces / ? t j v ge = 0 v, i c = 10 ma - 0.38 - v/c collector to emitter saturation voltage v ce(on) i c = 100 a v ge = 15 v see fig. 2, 5 - 1.60 1.9 v i c = 200 a - 1.92 - i c = 100 a, t j = 150 c - 1.54 - gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 temperature coeff. of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 2.0 ma - - 11 - mv/c forward transconductance g fe v ce = 100 v, i c = 100 a pulse width 5.0 s, single shot 79 - - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 1.0 ma v ge = 0 v, v ce = 600 v, t j = 150 c - - 10 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units total gate charge (turn-on) q g i c = 100 a v cc = 400 v v ge = 15 v; see fig. 8 - 770 1200 nc gate-emitter char ge (turn-on) q ge - 100 150 gate-collector ch arge (turn-on) q gc - 260 380 turn-on delay time t d(on) t j = 25 c i c = 100 a v cc = 480 v v ge = 15 v r g = 2.0 ? energy losses include tail see fig. 9, 10, 14 -54- ns rise time t r -79- turn-off delay time t d(off) - 130 200 fall time t f - 300 450 turn-on switching loss e on -0.98- mj turn-off switching loss e off -3.48- total switching loss e ts - 4.46 7.6 turn-on delay time t d(on) t j = 150 c i c = 100 a, v cc = 480 v v ge = 15 v, r g = 2.0 ? energy losses include tail see fig. 10, 11, 14 -56- ns rise time t r -75- turn-off delay time t d(off) - 160 - fall time t f - 460 - total switching loss e ts -7.24- mj internal emitter inductance l e measured 5 mm fr om package - 5.0 - nh input capacitance c ies v ge = 0 v v cc = 30 v f = 1.0 mhz; see fig. 7 - 16 500 - pf output capacitance c oes - 1000 - reverse transfer capacitance c res - 200 -
ga200sa60up www.vishay.com vishay semiconductors revision: 26-oct-11 3 document number: 94364 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - maximum collector current vs. case temperature fig. 5 - typical collector to emitter voltage vs. junction temperature 0.1 f - frequency (khz) load current (a) 1 10 100 for both: duty cycle: 50 % t j = 125 c t sink = 90 c gate drive as specified power dissipation = 140 w clamp voltage: 80 % of rated triangular wave: i 0 40 80 120 160 200 60 % of rated voltage ideal diodes i square wave: 10 1000 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i c - collector to emitter current (a) v ce - collector to emitter voltage (v) t j = 150 c t j = 25 c v ge = 15 v 20 s pulse width 10 1000 100 5.0 6.0 7.0 8.0 i c - collector to emitter current (a) v ge - gate to emitter voltage (v) t j = 150 c t j = 25 c v ge = 25 v 5 s pulse width 25 50 75 100 125 150 0 50 100 150 200 t c - case temperature (c) maximum dc collector current (a) 1 2 3 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 t j - junction temperature (c) v ce - collector to emitter voltage (v) v ge = 15 v 80 s pulse width i c = 400 a i c = 100 a i c = 200 a
ga200sa60up www.vishay.com vishay semiconductors revision: 26-oct-11 4 document number: 94364 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 6 - maximum effektive transient thermal impedance, junction to case fig. 7 - typical capacitance vs. collector to emitter voltage fig. 8 - typical gate charge vs. gate to emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal resistance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 1 10 100 0 v ce - collector to emitter voltage (v) c - capacitance (pf) 5000 10 000 15 000 20 000 25 000 30 000 v ge = 0 v, f = 1 mhz c ies = c ge + c gc , c ce shorted c res = c gc c oes = c ce + c gc c ies c oes c res 0 200 400 600 800 0 4 8 12 16 20 q g - total gate charge (nc) v ge - gate to emitter voltage (v) v cc = 400 v i c = 110 a 0 102030405060 r g - gate resistance ( ) total switching losses (mj) 0 10 20 30 40 50 60 v cc = 480 v v ge = 15 v t j = 25 c i c = 200 a total switching losses (mj) - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 1 10 100 t j - junction temperature (c) i c = 200 a i c = 100 a i c = 350 a r g = 2.0 v ge = 15 v v cc = 480 v
ga200sa60up www.vishay.com vishay semiconductors revision: 26-oct-11 5 document number: 94364 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - typical switching losses vs. collector current fig. 12 - turn-off soa fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit fig. 14a - switching loss test circuit fig. 14b - switching loss waveforms total switching losses (mj) i c - collector current (a) 0 100 200 300 400 0 10 20 30 40 50 60 r g = 2.0 t j = 150 c v cc = 480 v v ge = 15 v i c - collector current (a) 10 100 1000 1 10 100 1000 v ce - collector to emitter voltage (v) safe operating area v ge = 20 v t j = 125 c d.u.t. 50 v l v c * * driver same type as d.u.t.; v c = 80 % of v ce (max) note: due to the 50 v power supply, pulse width and inductor will increase to obtain rated i d 1000 v 1 2 1 2 480 v 4 x i c at 25 c 480 f 960 v 0 v to 480 v r l = = 50 v driver* 1000 v d.u.t. i c v c l * driver same type as d.u.t., v c = 480 v 3 1 2 t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3
ga200sa60up www.vishay.com vishay semiconductors revision: 26-oct-11 6 document number: 94364 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 1 - insulated gate bipolar transistor (igbt) 2 - generation 4, igbt silicon, dbc construction 3 - current rating (200 = 200 a) 4 - single switch, no diode 5 - sot-227 6 - voltage rating (60 = 600 v) 8 - none = standard production p = lead (pb)-free 7 - speed/type (u = ultrafast) device code 5 13 24 678 g a 200 s a 60 u p 3 (c) 2 ( g ) 1, 4 (e) lead a ss ignment e c g e 3 2 4 1 n-channel
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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